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The experimental estimation of the illumination generation rate in a nano-SOI film

C. RAVARIU1,* , G. ALECU2, F. RAVARIU3

Affiliation

  1. University “Politehnica”, Splaiul Independentei, Bucharest, Romania
  2. INCDIE ICPE-CA, 313 Splaiul Unirii, Bucharest, Romania
  3. INCDMT, Bucharest Baneasa, Romania

Abstract

Some of the most important nowadays SOI technologies, Unibond and SIMOX are in a challenge. The Unibond technique provides thinnest Semiconductor layers (<50 nm) on insulator, while the SIMOX technique has the advantage of a lower cost. The first part of the paper presents these techniques in order to accomplish nano-SOI films. In a second part of the paper, a standard SIMOX wafer, with 200 nm Si-film on 400nm buried oxide on 200 m Si-substrate was experimentally studied. From the electrical characteristics were deduced the residual net doping concentration in film, the electrical charge from the buried oxide in dark conditions. Then, an average value of the illumination generation rate, in the photoresistance obtained on nano-SOI wafer, was extracted..

Keywords

Silicon Insulator, Unibond technique, Electrical characterization.

Submitted at: Jan. 18, 2006
Accepted at: March 23, 2006

Citation

C. RAVARIU, G. ALECU, F. RAVARIU, The experimental estimation of the illumination generation rate in a nano-SOI film, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 593-596 (2006)