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THE IMPACT OF THE ELECTRON SPIN ON CHARGE CARRIER RECOMBINATION – THE EXAMPLE OF AMORPHOUS SILICON

K. Lips1,* , C. Boehme1, T. Ehara1

Affiliation

  1. Hahn-Meitner-Institut, Abt. Silizium-Photovoltaik, Kekuléstr. 5, D-12489 Berlin, Germany

Abstract

The electron spin is generally not considered in recombination processes, since it only marginally influences overall recombination rates. In spite of this, these small changes can be used for the investigation of recombination when spin configurations are manipulated during charge trapping and recombination on time scales much shorter than the lifetime (the coherence time) of the spin. Coherent spin manipulation can be induced by standard pulsed electron spin resonance. The electrical or optical detection of the coherent magnetic resonance does then allow a mapping of the qualitatively different recombination channels, as well as their dynamic behavior. We will review the basic idea of optical spin Rabi oscillation and recombination echo experiments, and discuss the experimental results achieved for the example of amorphous silicon (a-Si:H)..

Keywords

Recombination, Photoluminescence, a-Si:H, Spin, ESR.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

K. Lips, C. Boehme, T. Ehara, THE IMPACT OF THE ELECTRON SPIN ON CHARGE CARRIER RECOMBINATION – THE EXAMPLE OF AMORPHOUS SILICON, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 13-24 (2005)