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The influence of nitrogen content on the properties of TiNX thin films

D. MUNTEANU1,* , F. VAZ2

Affiliation

  1. Dept. of Technological Equipment and Materials Science, Transilvania University, 29 Eroilor Blvd., 500036 Brasov, Romania
  2. Dept. of Physics, Minho University, 4800 – 058 Guimarães, Portugal

Abstract

Within the frame of this work, the TiNx samples were deposited by reactive dc magnetron sputtering, from a high purity Ti target onto polished high-speed steel (AISI M2). The nitrogen content varies between 0 and 55 at.%. X-ray diffraction showed the development of the hexagonal -Ti phase, with strong [002] orientation, for low nitrogen contents. For nitrogen contents of 20 and 30 at.%, the -Ti2N phase appears with [200] orientation. With further increasing the nitrogen content, the -TiN phase becomes dominant. With increasing nitrogen content the films become harder, varying from about 8 GPa for pure titanium up to 27 GPa for a nitrogen content of 30 at.%. The hardness remains constant with a value of about 20 GPa within the range of 45 and 55 at.% N. A similar increase of residual stresses with nitrogen incorporation is observed..

Keywords

Titanium nitride, Nitrides, Structural properties, Sputtering.

Submitted at: Jan. 18, 2006
Accepted at: March 23, 2006

Citation

D. MUNTEANU, F. VAZ, The influence of nitrogen content on the properties of TiNX thin films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 720-725 (2006)