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The physical characteristics of Cu2S/CdS thin-film solar cell

A. ASHOUR1,*

Affiliation

  1. Physics Department, Faculty of Science, Minia University, Minia, Egypt

Abstract

Cu2S/CdS heterojunction has been prepared and characterized by using the vacuum evaporation technique on glass substrate. The Cu2S layer was obtained by the dry method, i.e. by evaporation of a CuCl film followed by heat treatment. The photovoltaic properties including I–V characteristics, short-circuit current (Isc), open-circuit voltage (Voc), fill factor (ff), efficiency (η) of Cu2S/CdS heterojunction cells have been examined after formation. Heat treatment improved the photovoltaic cells. High resistivity of CdS thin film, high series resistance and the poor design of the grid have lead to low efficiency..

Keywords

Cu2S/CdS cell, Polycrystalline films, Illumination, I-V Characteristics.

Submitted at: June 28, 2006
Accepted at: July 20, 2006

Citation

A. ASHOUR, The physical characteristics of Cu2S/CdS thin-film solar cell, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1447-1451 (2006)