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THE RELAXATION OF PHOTODARKENING IN Sn DOPED AMORPHOUS As2Se3 FILMS

M. S. Iovu1,* , S. D. Shutov1, P. Boolchand2, D. G. Georgiev2, E. P. Colomeico1

Affiliation

  1. Center of Optoelectronics, Str. Academiei 1, MD-2028 Chisinau, Republic of Moldova
  2. University of Cincinnati, Cincinnati, Ohio 45221-0030, USA

Abstract

Photodarkening relaxation under light exposure of a-As2Se3 amorphous films doped with 0.5-5.0 at.% Sn was studied for its dependence on the concentration of impurities and thermal treatment. Both factors reduce photodarkening with the degree of reduction dependent on the concentration of impurity. The relaxation process may be described by a stretched exponential with the dispersion parameter 0.1 £ a < 0.6 and the time constant increasing with tin concentration or thermal annealing. The results are discussed in the frame of the "slip-motion" model of photodarkening in chalcogenide glasses taking into account the peculiarities of the glass structure..

Keywords

Amorphous chalcogenide thin films, Optical transmission, Photodarkening.

Submitted at: March 28, 2003
Accepted at: May 8, 2003

Citation

M. S. Iovu, S. D. Shutov, P. Boolchand, D. G. Georgiev, E. P. Colomeico, THE RELAXATION OF PHOTODARKENING IN Sn DOPED AMORPHOUS As2Se3 FILMS, Journal of Optoelectronics and Advanced Materials Vol. 5, Iss. 2, pp. 389-395 (2003)