"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

THE ROLE OF ARSENIC IN THE IRREVERSIBLE PHOTOINDUCED TRANSFORMATIONS IN VACUUM DEPOSITED a-AsxS100-x THIN FILMS

J. Dikova1,*

Affiliation

  1. Central Laboratory of Photoprocesses “Acad. J. Malinowsky”, Bulgarian Academy of Sciences, “Acad. G. Bonchev”str. bl. 109, 1113 Sofia, Bulgaria

Abstract

The results from our recent studies on the optical changes induced by unpolarized and linearly polarized light in vacuum deposited a-AsxS100-x (15 £ x £ 42) amorphous thin films are summarized. The observed compositional trend of the photoinduced changes in the optical constants of as-deposited samples with different As/S ratio is compared with their photographic behaviour, investigated previously. On this basis the active role of As atoms during the irreversible photostructural transformations in arsenic sulphide films is emphasized. Thus, new experimental evidence for the validity of the so-called light induced phase separation model in arsenic chalcogenides has been obtained. Further, the kinetics of photodarkening and photoinduced dichroism in the a-AsxS100-x films studied is simultaneously followed and the existence of similar regularities in the compositional dependences of the both effects is established. On this ground the possibility to describe the mechanism of photoinduced scalar and vectorial effects in arsenic chalcogenides by one and the same model is discussed..

Keywords

Amorphous chalcogenides, Thin films, Photoinduced Optical changes, Scalar and vector effects.

Submitted at: Oct. 6, 2005
Accepted at: Nov. 24, 2005

Citation

J. Dikova, THE ROLE OF ARSENIC IN THE IRREVERSIBLE PHOTOINDUCED TRANSFORMATIONS IN VACUUM DEPOSITED a-AsxS100-x THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 6, pp. 2945-2952 (2005)