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THE SEEBECK COEFFICIENT OF TiO2 THIN FILMS

D. Mardare1,*

Affiliation

  1. “Al. I. Cuza” University, Faculty of Physics, 11 Carol I Blvd., R-700506, Iasi, Romania

Abstract

Undoped and doped TiO2 thin films were deposited onto glass substrates, by r.f. sputtering technique, at different substrate temperatures. The films were heat treated in order to stabilize the structure of the samples and to decrease the structural defects. The dependence of the Seebeck coefficient, α, versus inverse temperature, has been studied in the range 300 K–425 K. From the slope of the linear decrease of these dependences, Fermi energies have been obtained. The values of parameter r, which depend on the nature of the scattering mechanism of the current carriers, have been also determined..

Keywords

Titanium dioxide, Semiconducting films, Seebeck coefficient, Fermi level.

Submitted at: Aug. 18, 2004
Accepted at: March 23, 2005

Citation

D. Mardare, THE SEEBECK COEFFICIENT OF TiO2 THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 721-725 (2005)