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Three dimensional modeling and simulation of a nano MISFET photodetector

M. KABEER1, K. GOWRI2, V. RAJAMANI2,*

Affiliation

  1. Department of Information Technology, B.S. Abdur Rahuman Crescent College of Engg., Chennai, Tamilnadu, India
  2. Department of Electronics and Communication Engineering, P.S.N.A. College of Engineering and Technology, Dindigul – 624 622, Tamil Nadu, India

Abstract

This paper deals with three dimensional numerical modeling of an optically controlled nano MISFET photodetector for OEIC photoreceiver design. The field dependent mobility of the carriers in the surface potential is considered for modeling. The exact potential profile of the device under illuminated condition has been computed numerically by solving 3D Poisson’s equation using boundary value problems. The electric field profile along the length, width and thickness of the channel and mobility of the carriers have also been studied extensively under illuminated condition to have an in depth analysis. The photocurrent of the nano MISFET under illuminated condition has also been calculated and presented. The transfer characteristics of the MISFET has been studied numerically and presented in this paper. The results show that the device characteristics are strongly influenced by incident optical radiation. The switching speed has also increased under illuminated conditions because of the higher electron mobility and shorter transit time. The model enables one to estimate various parameters which determine the potential use of this device for photo detection in OEIC photoreceivers..

Keywords

Numerical 3D modeling, MISFET, Photodetector, Photocurrent, OEIC receivers.

Submitted at: July 23, 2007
Accepted at: Sept. 18, 2007

Citation

M. KABEER, K. GOWRI, V. RAJAMANI, Three dimensional modeling and simulation of a nano MISFET photodetector, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 9, pp. 2879-2885 (2007)