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Total ionizing dose response of commercial process for synthesis of linear bipolar integrated circuits

V. VUKIĆ1,* , P. OSMOKROVIĆ2

Affiliation

  1. Institute of Electrical Engineering "Nikola Tesla", Koste Glavinića 8a, 11000 Beograd, Serbia
  2. University of Belgrade, Faculty of Electrical Engineering, Bulevar Kralja Aleksandra 73, p. fah 35 - 54, 11000 Beograd, Serbia

Abstract

In this paper are presented results of commercial bipolar integrated circuits examinations in gamma and X radiation fields, for medium dose rate ionizing radiation. Voltage regulators "STMicroelectronics" L4940V5, made by 20V "High Density Super Signal/Power Process" (HDS2/P2) were exposed to 1,25 MeV photons of gamma radiation and 150 keV bremsstrahlung photons. By the examination of maximum output current, serial transistor dropout voltage and line regulation characteristics was detected high radiation hardness of the mentioned process. Mechanisms of ionizing radiation influence on semiconductor and insulator are analyzed. The main reasons of high HDS2/P2 process radiation reliability were identified..

Keywords

Ionizing radiation, Bipolar transistor, Analog integrated circuit, Radiation hardness.

Submitted at: July 5, 2006
Accepted at: July 20, 2006

Citation

V. VUKIĆ, P. OSMOKROVIĆ, Total ionizing dose response of commercial process for synthesis of linear bipolar integrated circuits, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1538-1544 (2006)