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TOWARD SUPER RADIATION TOLERANT SEMICONDUCTOR DETECTORS FOR FUTURE ELEMENTARY PARTICLE RESEARCH

G. Lindstroem1,* , E. Fretwurst1, G. Kramberger2,3, I. Pintilie1,4

Affiliation

  1. University of Hamburg, Institute for Experimental Physics, Luruper Chaussee 149, 22761 Hamburg, Germany
  2. Deutsches Elektronen Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
  3. Jozef Stefan Institute JSI, Jamova 39, 1000 Ljubljana, Slovenija
  4. National Institute of Materials Physics, NIMP, 77125 Bucuresti-Magurele, Romania

Abstract

The principal of a semiconductor particle detector is briefly outlined and applications in several fields of fundamental and applied physics mentioned. Starting from the basic physics motivation in High Energy Physics (HEP) research, the further discussion then focuses on the use of these devices in present and future HEP experiments outlining especially the requirements for precise measurements of elementary particle tracks, a task ideally fulfilled by segmented silicon detec tors. These developments have also initiated further applications in different fields as e.g. mate rial analysis, medical imaging and space missions. In future HEP-experiments such devices will however face an unprecedented challenge imposed by extremely intense radiation fields. Basics of hadron and lepton induced radiation damage in silicon are described together with their impli cations on the detector quality. The following part of the report is then dealing with several ap proaches to improve the radiation tolerance of silicon detectors. Defect engineering of the semi conductor material, modified detector geometries and specific operational conditions are out lined. First results toward a complete understanding of detector degradation as caused by point and cluster defects are given and these promising successes may finally pave the way for devel opments of superior devices..

Keywords

High energy physics instrumentation, Elementary particle detectors, High resistivity FZ and epitaxial silicon, Radiation damage, Radiation induced defects, Defect engineering.

Submitted at: Aug. 28, 2003
Accepted at: March 15, 2004

Citation

G. Lindstroem, E. Fretwurst, G. Kramberger, I. Pintilie, TOWARD SUPER RADIATION TOLERANT SEMICONDUCTOR DETECTORS FOR FUTURE ELEMENTARY PARTICLE RESEARCH, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 22-38 (2004)