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TRANSIENT PHOTOCONDUCTIVITY IN Se85-XTe15InX THIN FILMS

V. Sharma1, A. Thakur1, N. Goyal1, G. S. S. Saini1, S. K. Tripathi1,*

Affiliation

  1. Centre of Advanced Study in Physics, Panjab University, Chandigarh- 160 014, India

Abstract

The present paper reports the transient photoconductivity measurements on a-Se85-xTe15Inx (x = 0, 4, 10 at. %) glassy alloys. Dark conductivity ( d) increases and activation energy ( Ed) decreases as the In concentration increases. The value of pre-exponential factor ( 0) decreases with the increase of In concentration. Rise and decay of photocurrent (Iph) measurements have been carried out as a function of temperature and light intensity in all thin film samples. A peak in the rise curve is observed in all films before attaining the steady state value. This behavior decreases as the In concentration increases. From the data of the rise curves of these plots, the values of dispersion parameter ( ) have been calculated. Photosensitivity ( ph/ d) decreases on the incorporation of In additive. The values of decay rate constant ( d) have been calculated. The value of d increases as the concentration of In increases. The value of charge carrier concentration (n) increases after the In incorporation into Se85Te15 thin films. The results have been explained in terms of recombination mechanism in these materials..

Keywords

Chalcogenide, Photoconductivity, Recombination and defects.

Submitted at: July 4, 2005
Accepted at: July 21, 2005

Citation

V. Sharma, A. Thakur, N. Goyal, G. S. S. Saini, S. K. Tripathi, TRANSIENT PHOTOCONDUCTIVITY IN Se85-XTe15InX THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 2103-2112 (2005)