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Transport and magnetic properties on MgB2 thin films

G. ILONCA1,* , F. BEIUŞEANU2, V. TOMA1, T. JURCUT2, E.-V. MACOCIAN2

Affiliation

  1. Babeş – Bolyai University, Faculty of Physics, 1 Kogalniceanu str., RO-400084, Cluj – Napoca, Romania
  2. Faculty of Sciences, University of Oradea, Oradea, Romania

Abstract

Magnetotransport data on MgB2 thin films, fabricated on Al2O3 substrates using electron – bean deposition and Mg diffusion method are reported for applied magnetic field up to 9T. The upper critical field anisotropy, lower critical field and irreversibility field versus temperature were determined. The Hall coefficient is slightly temperature dependent and positive in normal state. Using the extracted data, the electronic mean free path, coherence length 0 penetration depth λ were calculated..

Keywords

MgB2 thin films, Magnetotransport properties, Hall effect, Magnetization.

Submitted at: Dec. 2, 2005
Accepted at: May 18, 2006

Citation

G. ILONCA, F. BEIUŞEANU, V. TOMA, T. JURCUT, E.-V. MACOCIAN, Transport and magnetic properties on MgB2 thin films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 1152-1155 (2006)