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ULTRAFAST OPTICAL KERR EFFECT IN AMORPHOUS Ge10As40S30Se20 FILM INDUCED BY ULTRASHORT LASER PULSES

Qiming Liu1,* , Xiujian Zhao1, Fuxi Gan2, Jun Mib3, Shixiong Qianb3

Affiliation

  1. Key Laboratory of Silicate Materials Science and Engneering (Wuhan University of Technology), Ministry of Education, 122 Luoshi Road, Hongshan District, Wuhan, Hubei 430070, P.R.China
  2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai, 201800, P. R. China School of Information Sciences and Engineering, Fudan University, Shang
  3. Department of Physics, Fudan University, Shanghai 200433, P.R.China

Abstract

The results of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultrafast pulses in amorphous Ge10As40S30Se20 film is reported in this Letter. The film shows an optical nonlinear response of 200 fs under ultrafast 80 fs-pulse excitation, and the values of real and imaginary parts of nonlinear susceptibility c(3) were 9.0·10-12 esu and –4.0·10-12 esu respectively. The large third-order nonlinearity and ultrafast response are attributed to the ultrafast distortion of the electron orbits surrounding the average positions of the nucleus of Ge, As, S and Se atoms. This Ge10As40S30Se20 chalcogenide glass would be expected as a promising material for optical switching technique..

Keywords

Amorphous Ge10As40S30Se20 film, Third-order nonlinearity; Femtosecond optical heterodyne detection of optical Kerr effect, Optical switch.

Submitted at: April 19, 2005
Accepted at: May 26, 2005

Citation

Qiming Liu, Xiujian Zhao, Fuxi Gan, Jun Mib, Shixiong Qianb, ULTRAFAST OPTICAL KERR EFFECT IN AMORPHOUS Ge10As40S30Se20 FILM INDUCED BY ULTRASHORT LASER PULSES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1323-1328 (2005)