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ULTRASONIC INVESTIGATION OF n-Si SAMPLES

P. Petculescu1,* , J. Matei1

Affiliation

  1. Department of Physics, the Ovidius University of Constanta, 8700, Romania

Abstract

The paper aims to cast a new light on the accuracy of ultrasound based measurement of elastic parameters for crystalline materials. We have measured the values of elastic parameters and their temperature variation for n-Si sample. We present two sets of empirical relations vs. the adiabatic approximation and the thermal coefficient of elastic constants. Our results are in agreement with the modern theory of crystal lattices elaborated by Leibfriend and Ludwig, which gives a general relationship between the elastic constants and the temperature considering the anharmonic nature of the atomic oscillations. Knowing the temperature variation of nonlinearity parameter, we estimated the degradation of the material. The results of our measurements of the elastic constants demonstrate that, in the investigated temperature range, the anisotropy factor is a constant and is equal to 1.54 ± 0.06..

Keywords

Semiconductors, Elastic parameters, Ultrasound velocity.

Submitted at: July 4, 2003
Accepted at: March 15, 2004

Citation

P. Petculescu, J. Matei, ULTRASONIC INVESTIGATION OF n-Si SAMPLES, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 253-260 (2004)