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Unstressed carbon-metal films deposited by thermionic vacuum arc method

C. P. LUNGU1, I. MUSTATA1, G. MUSA1, A. M. LUNGU1, O. BRINZA1, C. MOLDOVAN2, C. ROTARU2, R. IOSUB2, F. SAVA3, M. POPESCU3, R. VLADOIU4,* , V. CIUPINA4, G. PRODAN4, N. APETROAEId5

Affiliation

  1. National Institute R&D for Lasers, Plasma and Radiation Physics, Bucharest, Romania
  2. National Institute R&D for Micro and Nanotechnology, Bucharest, Romania
  3. National Institute R&D of Materials Physics, Bucharest, Romania
  4. Department of Physics, Ovidius University, Constanta, Romania
  5. Department of Physics, “Al. I. Cuza” University, Iasi, Romania

Abstract

A novel method based on thermo-ionic vacuum arc plasma was developed to grow metal-carbon zero stress films for MEMS applications. The method chosen to prepare metal-carbon films uses an electron beam emitted by an externaly heated cathode accelerated by a high anodic voltage. Applying a high voltage (1-6 kV) between cathode and anode bright plasma was ignited in carbon atoms. In order to minimize the internal stress and to get films with increased adherence, interlayer and graded interlayer with Fe, Cr, Al and Ni was deposited. The prepared films were characterized by XPS, XRD, AFM and elipsometry..

Keywords

MEMS application, TVA, Zero stress.

Submitted at: Nov. 7, 2005
Accepted at: Jan. 26, 2006

Citation

C. P. LUNGU, I. MUSTATA, G. MUSA, A. M. LUNGU, O. BRINZA, C. MOLDOVAN, C. ROTARU, R. IOSUB, F. SAVA, M. POPESCU, R. VLADOIU, V. CIUPINA, G. PRODAN, N. APETROAEId, Unstressed carbon-metal films deposited by thermionic vacuum arc method, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 74-77 (2006)