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I agree, do not show this message again.VACUUM DEPOSITED POLYIMIDE – A PERFECT MATRIX FOR NANOCOMPOSITE MATERIALS
G. Danev1,* , E. Spassova1, J. Assa1
Affiliation
- Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev-str., bl.109; 1113 Sofia, Bulgaria
Abstract
Polyimides represent a class of aromatic hydrocarbons of excellent dielectric, thermal and optical capacities. The possibilities for their synthesis as thin layers by the vacuum evaporation from precursors render them especially attractive for the modern optic and opto electronic technologies. The application of vacuum deposition allows for a controllable embedding in them of inorganic and organic components (dielectrics, semiconductors or metals) as “guests”. The exceedingly high chemical stability and low-dielectric-constant of the polyimide makes these layers a medium of good prospects for embedding meso- and nano- clusters. The process of vacuum deposition of polyimide layers (precursors: oxidianiline and pyromellitic dianhydride) in the range of 500 – 1000 nm has been investigated. The influence of thermal treatment and the ratio between both precursors on the properties of the formed layers have been studied and a technological window for PI film creation has been established. The composite system dielectric/semiconductor – where PI is used as a 3D and 2D matrix and the organic semiconductor (phthalocyanine) a “guest” has been subjected to investigation. The obtained PI and nanocomposite thin layers are especially attractive for the thin-layer technologies on organic basis for microelectronics as insulating layers with a flexible dielectric constant, in LCD as color filters and orientated layers, in OLED as protective, insulating and barrier layers, in sensorics as membranes or active layers..
Keywords
Polyimide, Thin films, Nanocomposites.
Submitted at: May 5, 2005
Accepted at: May 26, 2005
Citation
G. Danev, E. Spassova, J. Assa, VACUUM DEPOSITED POLYIMIDE – A PERFECT MATRIX FOR NANOCOMPOSITE MATERIALS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1179-1190 (2005)
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