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VISIBLE PHOTOLUMINESCENCE FROM ANNEALED POROUS SiOx FILMS

I. Z. Indutnyy1,* , I. Yu. Maidanchuk1, V. I. Min’ko1, P. E. Shepeliavyi1, V. A.Dan’ko1

Affiliation

  1. Institute of Semiconductor Physics NAS of Ukraine, 41, Nauky prosp., Kyiv, 03028, Ukraine

Abstract

Porous light-emitting SiOx films have been prepared by oblique thermal vacuum evaporation of SiO and thermal post-annealing in vacuum. A thermally stimulated (annealing temperatures – 700 and 950 oC) transformation of the SiOx layers, which leads to the formation of amorphous and crystalline Si nanoinclusions, was investigated using photoluminescence and infrared spectroscopy. The size of Si nanoparticles and their volume fraction depend on film’s porosity. Conclusion is drawn about possibility to control the structure, composition and, hence, light-emitting characteristics of nc-Si-SiOx structures by changing of the deposition angle..

Keywords

Nanocrystals, Photoluminescence, Porous silicon oxide, Thin film.

Submitted at: April 12, 2005
Accepted at: May 26, 2005

Citation

I. Z. Indutnyy, I. Yu. Maidanchuk, V. I. Min’ko, P. E. Shepeliavyi, V. A.Dan’ko, VISIBLE PHOTOLUMINESCENCE FROM ANNEALED POROUS SiOx FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1231-1236 (2005)