AMPS-1D investigations of interface properties on heterojunction silicon solar cells

p. 425-429

Amorphous/crystalline silicon heterojunctions are very promising structures for high efficient solar cells fabricated at low temperature. However, interface defects can enhance the recombination of photogenerated carriers and limit the cell efficiency. In this work, we have investigated the interface defect density of amorphous silicon hydrogenated (a-Si:H) heterojunctions(HJs)based on both n-type and p-type c-Si substrate. We have analyzed the influence of interface defect density on the photovoltaic response of each HJ solar cell using the resources of recognized AMPS-1D simulator by means of inserting an artificial extremely thin layer with a high bulk density of states representing the interface between the amorphous and crystalline silicon interface.