"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

β - FeSi2 and Schottky barrier at Fe/Si interface

CHHAGAN LAL1, RENU DHUNNA1, R. S. DHAKA2, S. R. BARMAN2, I. P. JAIN1,*

Affiliation

  1. Centre for Non-Conventional Energy Resources, University of Rajasthan, Jaipur, India
  2. UGC-DAE-CSR, Khandwa Road, Indore, 452001, India

Abstract

Metal / semiconductor interface investigations have been of enormous research interest because of technological application in microelectronics. In the present work Fe films deposited on Si(111) substrate were studied as a function of annealing temperatures for the formation of silicide phases. Grazing incidence x-ray diffraction (GIXRD) results show a stable disilicides β-FeSi2 formation at the interface at 6000 C. The coercivity, determined by Magneto Optical Kerr Effect (MOKE) technique shows a hysteresis curves for as-deposited and annealed samples which varies from 14.914 Oe to 31.016Oe. The coercivity of β-FeSi2 is higher than of pristine sample which is due to the formation of nanocrystalline grains with increasing annealing temperatures. X-ray photoelectron spectroscopy study shows shifting of Fe2P3/2 peak towards higher binding energy for annealed samples. The Schottky barrier height by the I-V measurement varies from 0.59eV to 0.49 eV.

Keywords

X-ray photoelectron spectroscopy, Electrical transport measurements, Metal-semiconductor interfaces, Schottky barrier, Thermionic emission.

Submitted at: Jan. 25, 2010
Accepted at: Feb. 27, 2010

Citation

CHHAGAN LAL, RENU DHUNNA, R. S. DHAKA, S. R. BARMAN, I. P. JAIN, β - FeSi2 and Schottky barrier at Fe/Si interface, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 177-183 (2010)