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WEILIANG FENG1,2, CHENG WU2, XIAOLING DUAN3,*
- Key Laboratory of Green Chemical Process of Ministry of Education, Wuhan Institute of Technology, Wuhan 430073, China
- Key Laboratory of Novel Reactor and Green Chemical Technology of Hubei Province, Wuhan Institute of Technology, Wuhan 430073, China
- School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan 430073, China
The doped ZnO samples (group I, group II, group III, and transition mental element doped) were fabricated via solvothermal method with dimethylacetamide (DMAc) solvent. The comparison of th e effects of different dopants on the morphological, microstructural, optical, and electrical properties of doped samples was investigated in detail. Compared to the pure sample, all doped ZnO samples showed high transparency in the visible range. The opti cal band gap obviously was decreased by doping. Furthermore, Urbach energy was calculated and discussed. The Urbach values indicated that the dopants may decrease the defect density of in the doped samples. The refractive index of the doped samples in the visible range showed different behavior. The resistivity of the obtained samples significantly depends on the doping types. The as prepared Al doped ZnO sample showed the lowest resistivity. At last, the photoluminescence exhibited the presence of a sharp ultraviolet emission and a broad blue emission at room temperature..
ZnO, Doping, Optical properties, Electrical properties.
Submitted at: Nov. 23, 2019
Accepted at: Feb. 17, 2020
WEILIANG FENG, CHENG WU, XIAOLING DUAN, A comparative study on the morphology, structural, optical and electrical properties of ZnO nanostructures doped with different ions of group I, II, III, and transition element, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 1-2, pp. 81-88 (2020)
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