Z. P. KOU¹, L. G. WANG^1,* , M. L. LIU¹, Y. F. LI¹, L. ZHANG¹

Abstract

The theoretical description of effect of the electric field on the mobility belongs to the not-yet-resolved problem related to charge transport in disordered organic semiconductors. Recently, the extended Gaussian disorder model (EGDM), a widely used mobility function, is heavily criticized for an underestimation of the electric field dependence of the mobility. In this paper, we propose an improved effective temperature extended Gaussian disorder model (ET-EGDM) by inserting the field dependent effective temperature instead of the real temperature into the EGDM. The improved model is applied to temperature dependent current density-voltage characteristics of hole-only and electron-only devices based on polymer:non-fullerene PM6:Y6 blend. In contrast to the EGDM, the improved model provides a better description of charge transport in PM6:Y6 blend, especially for electron-only device. The extracted values of intersite distance from the ET-EGDM are obviously smaller than that from the EGDM for both hole-only and electron-only devices, indicating that the ET-EGDM predicts a much stronger electric field dependence than the EGDM. These results prove that the effective temperature, responsible for the combined effects of the electric field and real temperature on the hopping mobility..

Keywords

Charge transport, Mobility model, Effective temperature, Disordered organic semiconductors.

Submitted at: Sept. 30, 2023
Accepted at: April 10, 2024

Citation

Z. P. KOU, L. G. WANG, M. L. LIU, Y. F. LI, L. ZHANG, A hopping transport model based on the effective temperature for disordered organic semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 3-4, pp. 101-105 (2024)

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