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A plasmonic switch using metal-insulator transition in VO2



  1. School of Electrical and Computer Science Engineering, Shoolini University, Solan, Himachal Pradesh, India
  2. Department of Material Science and Engineering, Inha University, Incheon, South Korea


We report on the design of a plasmonic switch using phase transition phenomena of a metal-dielectric-metal waveguide. The proposed switch uses vanadium di-oxide material, which undergoes phase transition from semiconducting to metallic phase around at 680C. The on and the off states of the switch correspond to the absence and presence of voltage applied to this material. The function of this device numerically studied using finite element method (FEM) simulation at the wavelength of 1.55 μm. We obtained a modulation depth of 40 dB for a device length, thickness and width of 0.50 μm, 0.1 μm and 0.3 μm, respectively. We show that how the dielectric films thickness, length, width and the wavelength of the incident light affect the modulation depth. The supporting modes and the relative losses for the given structure are also studied..


Optoelectronics, Plasmonics, VO2.

Submitted at: June 22, 2015
Accepted at: April 5, 2016


RAM PRAKASH DWIVEDI, DIVYA SHARMA, CHONGMU LEE, TANVI VAIDYA, A plasmonic switch using metal-insulator transition in VO2, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 3-4, pp. 207-212 (2016)