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A quantitative study of nitrogen content influence on the carrier mobility in GaNxAs 1-x (0.008<x<0.022)♣

H. ESHGHI1,* , F. SHARIATMADAR TEHRANI1

Affiliation

  1. Physics Department, Shahrood University of Technology, Shahrood, PoBox 316, Iran

Abstract

In this article we report our theoretical analysis of the electrical transport properties for experimental data on three Si-doped dilute nitride GaN xAs1-x (0.008<x<0.022) samples. Our analysis is based on effective electron scattering mechanisms including acoustic, piezoelectric and polar optical phonons, ionized and neutral impurities, dislocations and random and cluster alloys. Our analytical results show that: (a) As the nitrogen concentration increases, both the dislocation and the trap density increase, in the range (3-7)×109 cm-2 and (0.5-4)×1017 cm-3 respectively. (b) In the sample with the lowest N-content (x=0.8%) the cluster alloy dominates throughout temperature range 77-300 K. For other samples with x=1.7 and 2.2%, gradually the dislocation and neutral impurity scattering dominate the cluster alloy scattering up to 200 K..

Keywords

Semiconductor, Dilute nitride GaNAs, Electrical properties, mobility, Dislocations, Traps.

Submitted at: Nov. 5, 2008
Accepted at: Oct. 3, 2009

Citation

H. ESHGHI, F. SHARIATMADAR TEHRANI, A quantitative study of nitrogen content influence on the carrier mobility in GaNxAs 1-x (0.008<x<0.022)♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 10, pp. 1467-1470 (2009)