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A simple analysis of the interband absorption coefficient of bulk and quantum well of nonparabolic semiconductors with application to Hg1-xCdxTe material

ANUP DEY1,* , ANIRBAN NEOGI2, BISWAJIT MAITI3, DEBASREE CHANDA (SARKAR)4

Affiliation

  1. Electronics and Communication Engineering Department,Kalyani Government Engineering College,Kalyani-741235, Nadia, India
  2. Department of Electronics and Communication Engineering ,Dr. Sudhir Chandra Sur Degree Engineering College,Kolkata-700030, India
  3. Physics Department,Kalyani Government Engineering College,Kalyani-741235, Nadia, India
  4. Department of Engineering and Technological Studies,Kalyani University,Kalyani-741235, Nadia, India

Abstract

A simple generalized theoretical analysis is presented for the calculation of interband optical absorption coefficient (IOAC) in bulk and quantum well structure of nonparabolic semiconductors, away from band edges. Consideration is taken of the dependence of wave-vector ( k r ) in the three energy band model of Kane. It has been found, taking Hg1-xCdxTe as example, that the IOAC for quantum wells (QWs) increases in steps with increasing photon energy which reflects the modification of band structure due to quantum confinement effect. It is also observed that IOAC in quantum wells (QWs) is largely dependent on the polarization of the light vector and on the well dimensions too. The effects of temperature and alloy composition dependence are also discussed. The analysis takes into account the effect of band mixing, and the expressions of the IOAC presented in this paper can easily be extended to include the effects of different external conditions, like strain, electric and magnetic fields. It has also been found that the contribution of the heavy hole valence band to IOAC in QW is more significant at positions near the band edge for polarization along the plane of the well and negligible along the well axis..

Keywords

Interband absorption coefficient, Light hole, Quantum well, Optical matrix element, Band nonparabolicity, Compound semiconductors..

Submitted at: Jan. 26, 2012
Accepted at: April 11, 2012

Citation

ANUP DEY, ANIRBAN NEOGI, BISWAJIT MAITI, DEBASREE CHANDA (SARKAR), A simple analysis of the interband absorption coefficient of bulk and quantum well of nonparabolic semiconductors with application to Hg1-xCdxTe material, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 3-4, pp. 210-218 (2012)