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A SURFACE PHOTOVOLTAGE SPECTROSCOPY SYSTEM USED FOR MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS ON FLOATING ZONE SILICON

K. Kirilov1, V. Donchev1,* , Tsv. Ivanov1, K. Germanova1, P. Vitanov2, P. Ivanov2

Affiliation

  1. Faculty of Physics, Sofia University, 5. blvd. J. Bourchier, 1164 Sofia, Bulgaria
  2. Central Laboratory of Solar Energy and New Energy Sources, 1784 Sofia, 72 Tzarigradsko chaussee Blvd.

Abstract

An original experimental technique for surface photovoltage spectroscopy at temperatures from 65 to 300 K is presented, based on the metal-insulator-semiconductor approach. The technique is employed for spectral measurements and minority carrier diffusion length estimations in floating zone p-Si covered with (Al2O3)TiO2. The surface recombination velocity is evaluated from the resulting data..

Keywords

Surface photovoltage spectroscopy, MIS structure, Diffusion length, Surface recombination velocity.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

K. Kirilov, V. Donchev, Tsv. Ivanov, K. Germanova, P. Vitanov, P. Ivanov, A SURFACE PHOTOVOLTAGE SPECTROSCOPY SYSTEM USED FOR MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS ON FLOATING ZONE SILICON, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 533-536 (2005)