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A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon

MOHAMMAD REZA TAJARI MOFRAD1,* , ANTONIO LA MAGNA2, RYOICHI ISHIHARA1, HE MING1, KEES BEENAKKER1

Affiliation

  1. University of Technology, Delft Institute of Microelectronics and Submicrontechnology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM), P.O. box 5053, 2600 GB Delft, The N
  2. CNR-IMM Sezione Catania, Stradale Primosole 50, I-95121 Catania, Italy

Abstract

The aim of this work is to understand the mechanism behind facet formation during epitaxial growth of silicon induced by excimer laser which leads to formation of subgrains in the final crystallized films. We use a phase-field methodology applied to a three-dimensional finite elements simulation of the melt and regrowth phase of silicon during the excimer laser annealing. Due to the specific patterning of the structure, a thermal gradient exists which leads to geometrically non-uniform solidification front. This observation may be the main reason for the generation of subgrains..

Keywords

Excimer laser, Three-dimensional integration, Epitaxy, Phase-field simulation.

Submitted at: June 30, 2009
Accepted at: Feb. 27, 2010

Citation

MOHAMMAD REZA TAJARI MOFRAD, ANTONIO LA MAGNA, RYOICHI ISHIHARA, HE MING, KEES BEENAKKER, A three-dimensional phase-field simulation of pulsed laser induced epitaxial growth of silicon, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 701-706 (2010)