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AC and DC conduction properties of vacuum evaporated V2O5 thin films

R.SENGODAN1, A. SUBBARAYAN2, R. SATHYAMOORTHY2, S. GOPAL1

Affiliation

  1. Department of Physics, Kumaraguru College of Technology, Coimbatore- 641 006, Tamilnadu, India
  2. Department of Physics, Kongunadu Arts and Science College, Coimbatore – 641029, Tamilnadu, India

Abstract

Thin films of vanadium pentoxide (V2O5) was deposited on to well cleaned glass substrate in between aluminum electrodes form the MIM structure under the pressure of 10-5Torr. The transport mechanism in these films under A.C fields was studied by employing LCR meter in the frequency range 12 Hz to 100 kHz at various temperatures. The temperature co-efficient permitivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (έ) for the material of the film were calculated. The dependencies of activation energy on frequency and thickness also calculated. DC conduction studies indicate that the transport phenomenon may be of Schottky emission type. The zero field activation energy has a tendency to decrease with increase in thickness..

Keywords

Thin films; Temperature co-efficient; Dielectric constant; Schottky.

Submitted at: Feb. 28, 2010
Accepted at: July 14, 2010

Citation

R.SENGODAN, A. SUBBARAYAN, R. SATHYAMOORTHY, S. GOPAL, AC and DC conduction properties of vacuum evaporated V2O5 thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 7, pp. 1498-1504 (2010)