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AMPS-1D investigations of interface properties on heterojunction silicon solar cells

ASMAA BENSMAIN1, HADJIRATAYOUB1, BAYAZEBENTOUT1, ZINEB BENAMARA1

Affiliation

  1. Applied Microelectronic Laboratory, Faculty of Engineering, University of SidiBel Abbes, Algeria

Abstract

Amorphous/crystalline silicon heterojunctions are very promising structures for high efficient solar cells fabricated at low temperature. However, interface defects can enhance the recombination of photogenerated carriers and limit the cell efficiency. In this work, we have investigated the interface defect density of amorphous silicon hydrogenated (a-Si:H) heterojunctions(HJs)based on both n-type and p-type c-Si substrate. We have analyzed the influence of interface defect density on the photovoltaic response of each HJ solar cell using the resources of recognized AMPS-1D simulator by means of inserting an artificial extremely thin layer with a high bulk density of states representing the interface between the amorphous and crystalline silicon interface..

Keywords

Interface DOS, Solar cell, heterojunction (HJ), Amorphous silicon,AMPS-1D.

Submitted at: April 17, 2013
Accepted at: June 12, 2013

Citation

ASMAA BENSMAIN, HADJIRATAYOUB, BAYAZEBENTOUT, ZINEB BENAMARA, AMPS-1D investigations of interface properties on heterojunction silicon solar cells, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 5-6, pp. 425-429 (2013)