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An imaging measurement system of electron beam spot based on CMOS sensor and error correction

LINGCHAO BAI1,2, WEI HE1,* , BOHUA YIN2,3,*

Affiliation

  1. School of Instrument Science and Optoelectronics Engineering，Beijing Information Science and Technology University, Beijing 100192, China
  2. Research Department of Micro-nano Fabrication Technology and Intelligent Electronic Devices, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
  3. School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

The Scanning Electron Microscope (SEM) is essential for its exceptional resolution, especially in medical imaging, semiconductor technology, and nanomaterial characterization. This paper presents an optical imaging system that measures the SEM electron beam spot size using a magnification lens and a Complementary Metal Oxide Semiconductor (CMOS) sensor. The system acquires image data of a steel ruler and analyzes the correlation between unit length and pixel dimensions, the uncertainty of system is studied also. By analyzing the experimental data, a correction curve for the imaging system can be derived, and the corrected error is kept within ±0.043 μm..

Keywords

Imaging system, Beam spot measurement, Error analysis, Error correction.

Submitted at: Aug. 24, 2024
Accepted at: Feb. 3, 2025

Citation

LINGCHAO BAI, WEI HE, BOHUA YIN, An imaging measurement system of electron beam spot based on CMOS sensor and error correction, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 1-2, pp. 9-21 (2025)