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An improved mobility model with analytic current-voltage expression for disordered organic semiconductors

L. G. WANG1,* , H. ZHANG1, Z. P. KOU1, M. L. LIU1, L. ZHANG1

Affiliation

  1. School of Electrical Engineering and Automation, Henan Key Laboratory of Intelligent Detection and Control of Coal Mine Equipment, Henan Polytechnic University, Jiaozuo, 454003, People’s Republic of C

Abstract

The influence of temperature, electric field, and carrier density on hopping transport in disordered organic semiconductors is studied, and an improved mobility model that accounts for all those effects is derived. The model can accurately reproduce the experimental current-voltage characteristics of organic devices and can rather well fit numerical simulations from the master equation, and provides a clear picture of several physical effects by means of some mathematical expression. The space-charge limited current (SCLC) equations can be strictly solved with carrier density and electric field being replaced by their average value. An analytic current-voltage expression is derived, and is further validated with experimental data collected from different organic materials..

Keywords

Charge transport, Mobility model, Analytic current-voltage expression, Disordered organic semiconductors.

Submitted at: Sept. 5, 2024
Accepted at: Feb. 3, 2025

Citation

L. G. WANG, H. ZHANG, Z. P. KOU, M. L. LIU, L. ZHANG, An improved mobility model with analytic current-voltage expression for disordered organic semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 27, Iss. 1-2, pp. 62-68 (2025)