"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

An improved SPICE model for low-voltage power MOSFET devices

A. GALADI1,* , M. M. HASSANI2

Affiliation

  1. Laboratoire Environnement et Energie Renouvelable, Faculté des Sciences, Département de Physique, Université Ibn Tofail, Kenitra, Morocco
  2. Laboratoire Electronique et Instrumentation, Faculté des Sciences, Département de Physique, Université Cadi Ayyad, Marrakech, Morocco

Abstract

In this paper new SPICE power MOSFET model is presented. This model is based on physical structure of power MOSFET and describes more accurately the all operation regions of the device. The new semi-empirical model uses new expressions of the current-voltage relationship in the linear and subthreshold regions. The proposed model is validated by comparison between simulation and experimental data..

Keywords

Power VDMOSFET, Breakdown voltage, SPICE model, Validation..

Submitted at: April 17, 2013
Accepted at: June 12, 2013

Citation

A. GALADI, M. M. HASSANI, An improved SPICE model for low-voltage power MOSFET devices, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 5-6, pp. 457-462 (2013)