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An interface study of c-BP/c-GaN heterostructure

H. OZKISI1, A. KIRAGASI1, S. DALGIC1,*

Affiliation

  1. Physics Department, Faculty of Science, Trakya University, 22100, Edirne, Turkey

Abstract

We present the modeled a superlattice for cubic-GaN on BP structure at (001) direction. The modeling procedure was achieved by using first principle calculations based on the density functional theory with Plane Wave Self Consistent Field. We also report the total energy of ground state, lattice constant, electronic band structure and potential energy line up of heterojunction between c-BP/c-GaN compounds. The effects of interface have been investigated in this system..

Keywords

Bulk heterostructure, Macroscopic average, Band structure, Interface.

Submitted at: June 2, 2011
Accepted at: Nov. 23, 2011

Citation

H. OZKISI, A. KIRAGASI, S. DALGIC, An interface study of c-BP/c-GaN heterostructure, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1507-1509 (2011)