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Analysis of current-voltage characteristics of Au/n-GaAs (MS) Schottky diodes

İ. KAYA1, A. TATAROĞLU1,*

Affiliation

  1. Physics Department, Faculty of Arts and Sciences, Gazi University, 06500, Teknikokullar, Ankara, TURKEY

Abstract

The current-voltage (I-V) characteristics of Au/n-GaAs (MS) Schottky diodes were investigated in the temperature range of 300-400 K. By using the thermionic emission (TE) theory, the forward bias I-V characteristics are analyzed to estimate the MS Schottky diode parameters. The estimated zero-bias barrier height (ΦBo) and ideality factor (n) considering TE theory show strong temperature dependence. While the n decreases, the ΦBo increases with the increasing temperature. The values of the n andΦBo vary from 1.30 and 0.57 eV at 300 K to 1.12 and 0.66 eV at 400 K, respectively. Furthermore, the temperature dependence of energy distribution of interface states (Nss) was obtained from the forward bias I-V measurements by taking the bias dependence effective barrier height (Φe) into account. The Nss decreases with the increasing temperature. In addition, the values of series resistance (Rs) were determined using Cheung’s method. The results show the presence of thin interfacial insulator layer between the metal and semiconductor..

Keywords

I-V characteristics, Ideality factor, Barrier height, Interface states, Series resistance.

Submitted at: July 7, 2011
Accepted at: Feb. 20, 2012

Citation

İ. KAYA, A. TATAROĞLU, Analysis of current-voltage characteristics of Au/n-GaAs (MS) Schottky diodes, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 1-2, pp. 49-54 (2012)