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L. ZHANG1, J. Y. LIU1,* , L. G. WANG1,* , Y. J. WANG1, Y. GUO1, G. C. WANG1
- School of Electrical Engineering and Automation, Henan Polytechnic University, Jiaozuo, 454000, People’s Republic of China
In this paper, the electron transport in a fullerene derivative indene-C60 bisadduct (ICBA), which is frequently used in organic solar cells and transistors, is studied. From an analysis of the layer thickness and temperature dependence of the current density-voltage (J V ) characteristics of ICBA electron-only devices, it is found that consistent descriptions with equal quality are obtained using both the improved extended Gaussian disorder model (IEGDM) and the extended correlated disorder model (ECDM), within which spatial correlations between the transport site energies are absent and are included, respectively. Based on a comparison of the model parameters as obtained from both models, we view the more realistic intersite distance obtained using the IEGDM (2.7 nm) compared to the value obtained using the ECDM (0.3 nm) as an indication that in ICBA correlations between the transport site energies are absent. Distinguishing correlated from uncorrelated disorder, which we achieve on the basis of the intersite distance, is shown to be highly relevant for the development of quantitative organic electron device models..
Electron transport, Fullerene derivative, Intersite distance, Spatially correlated disorder.
Submitted at: Feb. 23, 2020
Accepted at: June 16, 2020
L. ZHANG, J. Y. LIU, L. G. WANG, Y. J. WANG, Y. GUO, G. C. WANG, Analysis of electron transport in a fullerene derivative: evidence for the absence of correlated disorder, Journal of Optoelectronics and Advanced Materials Vol. 22, Iss. 5-6, pp. 256-260 (2020)
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