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Analysis of even and odd modes of a two-dimensional photonic crystal at Si/SiO/Cu interface

D.G. POPESCU1,2,* , P. STERIAN1

Affiliation

  1. “Politehnica” University, Bucharest, 313, Splaiul Independentei, Sector 6, Bucharest, Romania
  2. National Institute of Materials Physics, Atomistilor 105b, P.O. Box MG-7, Bucharest-Magurele, Ilfov, 077125, Romania

Abstract

We present a careful analysis of field characteristics in two-dimensional photonic crystals with square and hexagonal symmetry designed in a Si/SiO2/Cu heterostructure. A special attention is devoted to frequencies close to photonic band gap. Following the symmetry classification in odd and even modes, their field characteristics are studied. The material prepared in a dedicated deposition chamber in ultra-high vacuum by annealing the Si/SiO2 substrate and subsequent deposition of 10Å copper in order to prevent the sample oxidation, allows the study of the photonic characteristics of the copper/silicon oxide/silicon interface. The chemical state of the Cu/SiO/Si system is addressed by photoelectron spectroscopy which allows us to deduce the amount of crystalline Si and amorphous oxide. In this manner a precise estimation of the dielectric constant of the materials is possible. It is expected that at the interface with copper, a strong confinement of radiation should appear due to high reflectivity of copper..

Keywords

Photonic crystal, Surface and interface properties, Photoelectron spectroscopy, Square and hexagonal symmetry.

Submitted at: Nov. 13, 2012
Accepted at: July 11, 2013

Citation

D.G. POPESCU, P. STERIAN, Analysis of even and odd modes of a two-dimensional photonic crystal at Si/SiO/Cu interface, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 7-8, pp. 610-614 (2013)