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Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes

SEDA BENGI1, M. MAHIR BÜLBÜL1,*

Affiliation

  1. Physics Department, Faculty of Sciences, Gazi University, 06500, Teknikokullar, Ankara, Turkey

Abstract

The effect of post-annealing on the current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage (G/-V) characteristics of metal-insulator-semiconductor Al/HfO2/p-Si (100) diode grown by Magnetron sputtering has been investigated at room temperature. The results indicate that the post-annealed sample for 2 h at 700 0C has a lower leakage current and interface states compared with the as-deposited sample. From the I-V, C-V and G/-V measurements, we also calculated the main diode parameters, including ideality factor n, barrier height B, interface states Nss, and series resistance Rs. It was found that the annealing process has strongly influenced the electrical properties of this sample..

Keywords

HfO2, Annealing effect, Interface states, Insulator layer.

Submitted at: July 24, 2012
Accepted at: March 13, 2014

Citation

SEDA BENGI, M. MAHIR BÜLBÜL, Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 451-456 (2014)