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Anomalous behavior of forward I-V and C-V characteristics of Schottky gate AlGaN/GaN HEMTs

M. MOSTEFAOUI1,* , H. MAZARI1, K. AMEUR1, S. MANSOURI1, N. BENSEDDIK1, Z. BENAMARA1, R. KHELIFI1, N. BENYAHYA1, J. M. BLUET2, C. BRU-CHEVALLIER2, W. CHIKHAOUI2

Affiliation

  1. Laboratoire de Microélectronique Appliquée, Département d’électronique, Université Djillali Liabès de Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algérie
  2. Institut de Nanotechnologie de Lyon, INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France

Abstract

In this work we investigate AlGaN/GaN HEMTs structures grown by Low Pressure Metal Organic Chemical Vapour Depostion on SiC substrate. The aim of our work is to study anomalous behavior of the performance results of the characteristics I-V and C-V of (Mo/Au)-AlGaN/GaN HEMTs structure at room temperature. The experimental data were analyzed considering different current-transport mechanisms, such as thermionic emission, generation-recombination, tunneling and leakage currents. The barrier height ( ), ideality factor (n) and series resistance (Rs) of (Mo/Au)-AlGaN/GaN HEMTs have been calculated from their experimental forward bias current-voltage-temperature (I-V). The capacitance-voltage (C-V) of (Au/Mo)-AlGaN/GaN HEMTs were investigated at room temperature..

Keywords

AlGaN/GaN, HEMTs, LPMOCVD, Electrical characterization.

Submitted at: Dec. 15, 2013
Accepted at: July 10, 2014

Citation

M. MOSTEFAOUI, H. MAZARI, K. AMEUR, S. MANSOURI, N. BENSEDDIK, Z. BENAMARA, R. KHELIFI, N. BENYAHYA, J. M. BLUET, C. BRU-CHEVALLIER, W. CHIKHAOUI, Anomalous behavior of forward I-V and C-V characteristics of Schottky gate AlGaN/GaN HEMTs, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 7-8, pp. 849-853 (2014)