"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interactions

T. JY. DERRIEN1,* , T. SARNET1, M. SENTIS1, T. E. ITINA1,2

Affiliation

  1. Laboratoire Lasers, Plasmas et Procédés Photoniques, UMR CNRS 6182/Université de la Méditerranée, 163 avenue de Luminy, 13288 Marseille, France
  2. Laboratoire Hubert Curien, UMR CNRS 5516/Université de Lyon, 18 rue Benoît Lauras, Bat. F, 42000, Saint-Etienne, France

Abstract

We consider the case of surface irradiation by a small number of femtosecond laser shots leading to the formation of surface ripples. To explain this effect, we propose a numerical model that accounts for the following processes: (i) interference of the laser irradiation with an electromagnetic surface wave propagating on a silicon sample; (ii) free carrier formation and laser energy absorption; (iii) energy relaxation and electron-phonon coupling. We perform numerical calculations taking into account the interference of a surface wave with laser; and present the obtained simulation results in order to explain formation mechanisms of the experimentally observed patterns..

Keywords

LIPSS, Femtosecond laser, Ripple, Black silicon.

Submitted at: June 22, 2009
Accepted at: Feb. 27, 2010

Citation

T. JY. DERRIEN, T. SARNET, M. SENTIS, T. E. ITINA, Application of a two-temperature model for the investigation of the periodic structure formation on Si surface in femtosecond laser interactions, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 610-615 (2010)