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Asymmetric aerial oxidation for applications in intracavity contacted oxide aperture VCSELs

Y. J. YOO1, Y. M. SONG1


  1. Department of Electronics Engineering, Pusan National University, Busan 609-735, Korea


We present an asymmetric aerial oxidation that enables volume reduction and minimization of parasitic impedances in intracavity contacted vertical-cavity surface-emitting lasers (VCSELs). Thermal oxidation of AlGaAs in mesas with various geometries reveals the possibility of asymmetric aerial oxidation. Theoretical modeling results based on diffusion equation also support the experimental results. As a preliminary result, we fabricated 980 nm intracavity-contacted oxide-aperture VCSELs by using an asymmetric oxidation. The device exhibits modulation bandwidth of 11.5 GHz at a bias current of 6 mA, with a modulation current efficiency factor of 5.6 GHz/mA1/2. The proposed concept can be used for various Aluminumoxide(AlOx)-based devices such as VCSELs, edge emitting lasers, and GaAs on insulator (GOI) field effect transistors..


Aluminum oxide, Vertical cavity surface emitting lasers, Aluminum Gallium Arsenide, Thermal oxidation.

Submitted at: Nov. 13, 2015
Accepted at: Feb. 10, 2016


Y. J. YOO, Y. M. SONG, Asymmetric aerial oxidation for applications in intracavity contacted oxide aperture VCSELs, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 77-81 (2016)