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Au/PAr/n-CdS/ITO polymer insulated MIS structure

M. CALISKAN1,* , F. KURUOGLU1, M. SERIN1

Affiliation

  1. Department of Physics, Yildiz Technical University, 34220, Istanbul, Turkey

Abstract

In this work, we present optical, structural and electrical characterizations of Au/PAr/CdS metal interlayer semiconductor diode (MIS) structure by X-Ray diffraction (XRD), ultraviolet-visible (UV-vis) spectroscopy and curent-voltage (I-V) measurements at room temperature and in the dark. CdS was deposited onto ITO substrates by spray pyrolysing method, PAr was coated over CdS by drop-casting method and a gold metal contact was evaporated by e-beam evaporation system. The barrier height of Au/CdS (MS) structure was calculated to be 0,48eV. The barrier height of Au/PAr/CdS MIS structure was found different from that of the SBH value of Au/CdS MS structure. For the Au/PAr/CdS (MIS) structure, the barrier height, B, and ideality factor, n, have been calculated as 0.61 eV and 2.25, respectively, from forward bias I-V measurements. The higher ideality factor attributed to the series resistance, Rs was calculated as 907.4 kand 897.1 kfrom Cheung functions. The effective barrier height, , and the series resistance, Rs, of the Au/PAr/CdS structure were also calculated using Norde method and found to be as 0.74 eV. and 974 krespectively. The interface state density (Nss) were obtained from the forward bias I–V characteristics at a region changing from 4x1015 eV-1cm-2 to 1x1015 eV-1cm-2. The charge transport mechanism of the structure were determined by the power law behaviour of the current with different exponent were determined and three main slopes were found..

Keywords

Au/PAr/CdS, Schottky diode, MIS structure parameters, Density of states, Charge transport mechanism.

Submitted at: Feb. 5, 2014
Accepted at: May 15, 2014

Citation

M. CALISKAN, F. KURUOGLU, M. SERIN, Au/PAr/n-CdS/ITO polymer insulated MIS structure, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 5-6, pp. 705-711 (2014)