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Background gas driven photoemission from laser ablated Li+ doped Gd2O3:Eu3+ thin films

GEO RAJAN1, K. G. GOPCHANDRAN1,*

Affiliation

  1. Department of Optoelectronics, University of Kerala Kariavattom, Thiruvananthapuram-695 581, India

Abstract

High quality Gd1.82Eu0.10Li0.08O3 thin films have been deposited on quartz substrate under oxygen, nitrogen and argon reactive atmospheres using pulsed laser deposition technique. The influence of various reactive atmospheres on the structural, morphological and optical properties were investigated systematically using X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence spectroscopy (PL). The crystalline phase, surface morphology and surface roughness were found to be very sensitive to the ambient gas, which was used during deposition. The highest emission intensity was observed for the films grown under oxygen reactive atmosphere, whose brightness was 1.52 and 5.97 times higher than that of the films grown under nitrogen and argon ambient atmospheres. The films prepared under nitrogen ambient atmosphere, the intensity ratio of the 612 nm peak to that of 624 nm peak was found to be higher than that of films deposited under oxygen and argon atmospheres..

Keywords

Thin film, Gd2O3:Eu, Li-doped, Laser ablation, Photoemission.

Submitted at: May 10, 2009
Accepted at: May 28, 2009

Citation

GEO RAJAN, K. G. GOPCHANDRAN, Background gas driven photoemission from laser ablated Li+ doped Gd2O3:Eu3+ thin films, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 5, pp. 590-596 (2009)