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Barrier-cluster model – the base for understanding of the optical phenomena in non-crystalline semiconductors

I. BANIK1

Affiliation

  1. Slovak University of Technology, Faculty of Civil Engineering, Department of Physics, Radlinského 11, 813 68 Bratislava, Slovak Republic

Abstract

The paper introduces on the first place the basic information on the barrier-cluster model of a non-crystalline semiconductor and on its possibilities to explain physical phenomena in non-crystalline semiconductors namely in chacogenide glasses. In addition, it presents the derivation of dependency of photoluminescence efficiency of primary radiation on energy of excited photons (so called PLE-characteristics). This work also brings some remarks on current open problems of non-crystalline semiconductors and sketches the new potential possibilities of this model to explain those problems..

Keywords

Chalcogenide glass, Cluster, Barrier-cluster model, Optical absorption, Photoluminescence, Photoconductivity, Amorphous, Semiconductor, Non-crystalline semiconductor.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

I. BANIK, Barrier-cluster model – the base for understanding of the optical phenomena in non-crystalline semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 1915-1930 (2009)