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Breakdown Analysis of Normally-Off 4H-SiC Trenched and Implanted VJFET

T. MUNIR1,* , M. FAKHAR-E-ALAM1,* , F. ABBAS2, M. ATIF3,4

Affiliation

  1. Physics department, GC University Faisalabad. Pakistan
  2. Microelectronics Division/Center of Excellence in Solid State Physics, University of the Punjab, Lahore-54590, Pakistan
  3. Physics and Astronomy Department, College of Science, King Saud University Riyadh 11451, Saudi Arabia
  4. National Institute of Laser and Optronics, Nilore, Islamabad, Pakistan

Abstract

The optimum channel width and temperature is necessary for high and stable breakdown voltage of normally-off 4H-SiC based VJFET. The dependence of breakdown voltage on variation of channel width (0.8-0.9 µm) and temperature (300K to 773K) was studied using sentaurus TCAD. The highest breakdown voltage was 2048 V reported at channel width of 0.8 µm at 300K. As channel width and temperature increases breakdown voltage decreases due to depletion region width decreases. The strong electric field and impact ionization decreases from gates towards drain with increase in channel width and tempearture which reduces breakdown voltage..

Keywords

Breakdown voltage, Impact ionization, Electric field, VJFET.

Submitted at: Sept. 24, 2014
Accepted at: Nov. 13, 2014

Citation

T. MUNIR, M. FAKHAR-E-ALAM, F. ABBAS, M. ATIF, Breakdown Analysis of Normally-Off 4H-SiC Trenched and Implanted VJFET, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 11-12, pp. 1400-1404 (2014)