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Characterisation of Au/n-Si and Pt/p-Si by HRTEM and XRD

M. BAHRIM1,* , I. V. POPESCU2, V. CIUPINA3, G. PRODAN3, GH. V. CIMPOCA2

Affiliation

  1. “Ovidius” High School, Constanţa, Romania
  2. ”Valahia” University of Târgovişte,Romania
  3. ”Ovidius” University of Constanţa, Romania

Abstract

This material contains the TEM analyses of Pt and Au silicides compared with XRD. By using TEM microscopy we study the interfaces of Au/n-Si and Pt/p-Si. We can establish the phases of formation the gold and platinum silicides from Au and Pt deposed on n-Si and p-Si. For the Au/n-Si interfaces we study the formation of the interfaces and phases the modification of Au precipitates in Si monocrystalline through of treatment from 350 o C up to 459 o C. For the Pt/p-Si interfaces we study the formation of the interfaces and phases the modification of Pt precipitates in Si monocrystalline through of treatment from 400 o C up to 800 o C..

Keywords

Silicides, diffraction X (XRD), electronic microscopy (TEM).

Submitted at: April 7, 2010
Accepted at: April 26, 2010

Citation

M. BAHRIM, I. V. POPESCU, V. CIUPINA, G. PRODAN, GH. V. CIMPOCA, Characterisation of Au/n-Si and Pt/p-Si by HRTEM and XRD, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 4, pp. 806-809 (2010)