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Characterization of electron beam evaporated CdTe thin films for optoelectronic devices

M. M. ABD EL-RAHEEM1,2, H. M. ALI3,2,* , N. M. EL-HUSAINY1

Affiliation

  1. Physics Department, Faculty of Science, El-Taif University, K.S.A
  2. Physics Department, Faculty of Science, 82524 Sohag, Sohag University, Egypt
  3. Physics Department, Faculty of Science, Al-Baha University, K.S.A

Abstract

Thin films of CdTe with different film thickness have been grown on glass substrates with different film thickness by electron beam evaporation technique. The influence of the thickness and annealing temperature on the structural, optical and electrical characteristics of CdTe films have been investigated. The structure of the deposited CdTe films was of the zincblend type with a preferential orientation of (111) planes. The optical transmittance of these films was determined using a double beam spectrophotometer. All the spectra reveal interference fringes in the wavelength region from 820 to 2500 nm. The refractive index, n was calculated from the transmission spectra using the Swanepoel’s method. The electrical resistivity measurements were carried out using the two-terminal configuration in air. High resistive CdTe films have been obtained after annealing temperature at the temperature 400 oC..

Keywords

Thin films, Structure properties, Transmittance, Refractive index, Electrical resistivity.

Submitted at: May 29, 2009
Accepted at: June 28, 2009

Citation

M. M. ABD EL-RAHEEM, H. M. ALI, N. M. EL-HUSAINY, Characterization of electron beam evaporated CdTe thin films for optoelectronic devices, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 6, pp. 813-819 (2009)