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Charge state dependent darkening in AsSe thin films induced by slow multiply charged Ne ions

I. IVÁN1, S. BIRI1, J. PÁLINKÁS2, S. KÖKÉNYESI2,*

Affiliation

  1. Institute of Nuclear Research of the Hungarian Academy of Sciences, Bem tér 18/c, 4026 Debrecen, Hungary
  2. Department of Experimental Physics, University of Debrecen, Bem ter 18/a, 4026 Debrecen, Hungary

Abstract

A charge state dependent effect of ion bombardment on the optical absorbance of AsSe thin films irradiated with 120 keV Neq+ (q = 4...8) ions have been observed and traced back to the charge state dependence of the modified layer thickness and projected range of the ions. The projected range decreases by about 20 % with increase of the ion’s initial charge state from 4 to 8. The elongation of charge equilibration for highly charged ions in a solid matter is discussed as a possible reason..

Keywords

AsSe, Thin films, Ne ions, Optical absorbance.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

I. IVÁN, S. BIRI, J. PÁLINKÁS, S. KÖKÉNYESI, Charge state dependent darkening in AsSe thin films induced by slow multiply charged Ne ions, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2008-2010 (2009)