"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Chemical vapor deposition of carbon layers on Si {001} substrates♣

T . I. MILENOV1,* , P. M. RAFAILOV1, G. V. AVDEEV2, C. THOMSEN3

Affiliation

  1. “G.Nadjakov” Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  2. ”R.Kaishev”Institute of Physical Chemistry, Bulgarian Academy of Sciences, 1113 Sofia, Bulgaria
  3. Institut für Festkörperphysik der Technischen Universität Berlin, Sekr. PN 5-4, Hardenbergstr. 36, D-10623 Berlin, Germany

Abstract

Chemical vapor deposition of carbon layers was carried out by pyrolysis of acetone in an Ar main gas flow at different temperatures in the range 950- 1200o C, on Si {001} substrates. The morphology of the surfaces of the obtained thin layers was studied by SEM. The layers obtained at high temperature were additionally examined by Raman spectroscopy. The structure of the layers was analyzed by X-ray diffractometry. It was established that their crystalline character becomes more pronounced upon increasing the deposition temperature from 950o C to 1050oC, and even mixed diamond-like and graphite layers appear at 1200oC..

Keywords

Thin films, SEM, XRD, Raman spectroscopy.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

T . I. MILENOV, P. M. RAFAILOV, G. V. AVDEEV, C. THOMSEN, Chemical vapor deposition of carbon layers on Si {001} substrates♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1273-1276 (2009)