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B. BUVANESWARI1,* , N. B. BALAMURUGAN2
- Department of Computer Science and Engineering, K.L.N. College of Engineering, Madurai, Tamilnadu, India-630612
- Department of Electronics and Communication Engineering, Thiyagarajar College of Engineering, Madurai, Tamilnadu, India-625015
In this paper, an analytical model for DG MOSFET based biosensor has been developed by applying Dielectric Modulation (DM) technique. This paper dealt with three types of DG MOSFET structures. These structures are classified with respect to the location of a uncovered region, which is acting as a door for the biomolecules. The uncovered region is called as a nanocavity region, that is formed by etching the gate oxide layer. In the first configuration, biomolecules are immobilized near the source. In the second configuration, the immobilization has been done near the drain. In the next configuration, the biomolecules are interacting through the vicinity of both the source and drain regions. This paper summarizes the performance metric such as sensitivity of the various biosensors and the metrics have been compared. The short channel effects of various configurations are analyzed and their mitigation level is compared , in order to put forward a optimum device structure in a nanoscaled limit..
Poisson 's equation, Parabolic approximation, Short channel effects, Biosensor.
Submitted at: March 14, 2018
Accepted at: Oct. 10, 2018
B. BUVANESWARI, N. B. BALAMURUGAN, Comparative analytical analysis of various configurations of nanoscaled dielectric-modulated double gate MOSFET based biosensors, Journal of Optoelectronics and Advanced Materials Vol. 20, Iss. 9-10, pp. 526-536 (2018)
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