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Comparative study of electrical parameters of Au/GaN and Hg/GaN Schottky diodes

R. KHELIFI1,* , H. MAZARI1, S. MANSOURI1, K. AMEUR1, Z. BENAMARA1, M. MOSTEFAOUI1, N. BENSEDDIK1, N. BENYAHYA1, P. RUTERANA2, I. MONNET2, J. M. BLUET3, C. BRU-CHEVALLIER3

Affiliation

  1. Laboratory of Applied Microelectronics, Department of Electronics,Djillali Liabès University of Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algeria
  2. Centre for Research on Ions Materials and Photonics, CIMAP, UMR 6252 CNRS-ENSICAEN-CEA-UCBN, 14250 Caen Cedex, France
  3. University of Lyon, Lyon Institute of Nanotechnology, INL-UMR5270,CNRS, INSA Lyon, Villeurbanne F-69621, France

Abstract

In this work, we have carried out a comparative study of electrical parameters determined from the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaN and Hg/n-GaN structures. The analysis of the (I-V) curve for the Au/n-GaN structure showed an ideality factor, barrier height and series resistance of about 1.02, 0.65 eV and 84 Ω, respectively. While for the Hg/n-GaN structure, the values determined are respectively 1.13, 0.65 eV and 670 Ω. The barrier heights and doping concentrations determined from the (C-V) curves are of the order of 1.17 eV and 8.16×1016 cm-3 for the Au/n-GaN Schottky diode and 1.34 eV and 1.87×1016 cm-3 for the Hg/n-GaN Schottky diode. The interfacial state density Nss calculated is equal to 1.09×1012 cm-2 eV-1 for the two diodes..

Keywords

Au/GaN, Hg/GaN, (I-V), (C-V), Schottky diodes.

Submitted at: April 17, 2013
Accepted at: June 12, 2013

Citation

R. KHELIFI, H. MAZARI, S. MANSOURI, K. AMEUR, Z. BENAMARA, M. MOSTEFAOUI, N. BENSEDDIK, N. BENYAHYA, P. RUTERANA, I. MONNET, J. M. BLUET, C. BRU-CHEVALLIER, Comparative study of electrical parameters of Au/GaN and Hg/GaN Schottky diodes, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 5-6, pp. 471-474 (2013)