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Comparison of new and old generations of the phase change memory chalcogenide materials and devices

K.D. TSENDIN1,* , N. A. BOGOSLOVSKIY1

Affiliation

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021, Saint-Petersburg, Russia

Abstract

A comparison of the two generations of the phase change memory cells was made. Advantages and disadvantages of the new generation of the phase change memory were formulated from the point of view of an electronic-thermal theory. The phase change memory technology was compared with the flash memory technology..

Keywords

PC memory, Chalcogenide glasses.

Submitted at: Nov. 1, 2011
Accepted at: Nov. 23, 2011

Citation

K.D. TSENDIN, N. A. BOGOSLOVSKIY, Comparison of new and old generations of the phase change memory chalcogenide materials and devices, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1429-1432 (2011)